. Electronic Components Datasheets 2n5400 free download

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2N5400(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.130v) MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipation 0.625 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100A, IE=0 -130 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -120 V Emitter-base breakdown voltage V(BR)EBO IE= -10A, IC=0 -5 V Collector cut-off current ICBO VCB= -100 V, IE=0 -0.1 A Emitter cut-off current IEBO VEB= -3 V, IC=0 -0.1 A hFE1 VCE= -5 V, IC=-1mA 30 DC current gain hFE2 VCE= -5 V, IC= -10mA 40 180 hFE3 VCE= -5 V, IC=-50mA 40 VCE(sat) IC= -10mA, IB= -1mA -0.2 V Collector-emitter saturation voltage VCE(sat) IC= -50mA, IB= -5mA -0.5 V VBE(sat) IC= -10mA, IB= -1mA -1 V Base-emitter saturation voltage VBE(sat) IC= -50mA, IB= -5